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Posted on 17 May 2019

3rd Gen SiC Schottky Barrier Diodes(SBDs) for enhanced performance and reliability

 

New diodes shows optimum stability and power efficiency for high power applications

At PCIM in Nuremberg from May 10-12, 2016, ROHM Semiconductor introduced its new 3rd Gen SiC SBD (Schottky Barrier Diodes) for enhanced performance. Continuously developing its portfolio based on its complete inhouse manufacturing capabilities, ROHM presents the first of their kind rated at 650V/6, 8, 10A and come in a TO220AC package. The new diodes realize lowest VF and lowest IR within the entire temperature range among all SiC SBDs available in the market. In addition to this, they feature high surge current capability which is suitable for Power Supply applications.

SiC diodes exhibit stabler temperature characteristics and ultra-short reverse recovery time compared with silicon-based devices which basically makes them ideal for high speed switching. Indicating extremely stable low forward voltage at high temperatures, the SiC SBDs also guarantee minimum reverse current.

Compared to the single SBD structure of the 2nd Gen, this 3rd Gen contains PN junction structure along with Schottky Barrier, which additionally ensures durability in bipolar operation.

Overall, these features contribute to the ongoing trend of high efficiency, high power density and highly robust designs.

Key Specifications [650V/10A rated product]

  • VF@10A (25°): typ. 1.35V
  • VF@10A (150°): typ. 1.44V
  • IR (25°): typ. 0.03μA@650V
  • Max. temperature: 175°
  • IFSM 50Hz, 1 pulse: 82A

Availability

3rd Gen SiC SBDs in TO-220AC packages are available.

Lower current rating device and D2pak (LPTL) package will be available in June.

About ROHM Semiconductor

ROHM Semiconductor is a global company of 362,772 million yen (3,30 billion US$) revenue with 20,843 employees in the last fiscal year ending March 2015. ROHM Semiconductor develops and manufactures a very large product range from the Ultra Low Power Microcontroller, Power Management, Standard ICs, SiC Diodes, Mosfets and Modules, Power Transistors and Diodes, LEDs to passives components such as Resistors, Tantalum Capacitors and LED display units, thermal Printheads in state-of-the-art manufacturing plants in Japan, Korea, Malaysia, Thailand, the Philippines, China and Europe.

LAPIS Semiconductor (former OKI Semiconductor), SiCrystal AG and Kionix are companies of ROHM Group.

ROHM Semiconductor Europe has its head office near Dusseldorf serving the EMEA region (Europe, Middle East and Africa). For further information please contact www.rohm.com/eu

 

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