Author Archives | Bodos Power Systems

Bodos Power Systems - who has written 785 posts on PowerGuru – Power Electronics Information Portal.

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How Proper Applications of Thermally Conductive Materials will Improve Motor Power Density

Posted on 30 July 2015

      Motor designers have battled heat in motor designs for years. Thermal losses in electric machines rob motion systems of power and degrade efficiency. Excess heat can reduce reliability of motors and shorten their lifetimes. Meanwhile, electrification in all transportation sectors is driving requirements for motors with ever-higher power densities. By Anita LaFond, [...]

Keep Pace with Today´s Power Technology

Posted on 25 July 2015

      As one of the leading electronics companies Texas Instruments fuels power designs with an innovative portfolio and speeds time to market with powerful, easy-to-use design tools. Now the company extends its power product range with some industry firsts. By Wolfgang Patelay, Freelance Journalist, Bodo´s Power Systems According to Dave Priscak, Director, Power [...]

Switching Behavior of USCi’s SiC Cascodes

Posted on 15 June 2015

      The co-packaged cascode device, combining a Silicon low voltage FET with a trench vertical SiC normally-on JFET, was recently introduced by United Silicon Carbide. This device has several benefits, including the ability to use standard 10V or 12V gate drive, high Vth (4.5V), fast temperature independent switching, avalanche and short circuit-ratings and [...]

Wireless Power Transmission with High Efficiency and Wide Dynamic Range for Extensive Applications

Posted on 15 June 2015

      Wireless power transmission has been known for many years, with inductive near field proximity coupling being the most commonly used technology. By Markus Rehm, Ingenieurbuero Rehm, Villingen-Schwenningen, Germany The demand for wireless power supplies is huge: Mobile devices, charged without wire or contact, are robust, splash proof, reliable, simple to protect against [...]

DC-Link Capacitor Technology Comparison

Posted on 20 May 2015

      Aluminum Electrolytic vs. Film Capacitors By Dr. Arne Albertsen, Jianghai Europe Electronic Components GmbH Introduction The progress in semiconductor design sets the trend in current and future devices of power electronics: it manifests itself particularly in smaller dimensions, as well as in higher voltages and switching frequencies. Referring to intermediate circuit capacitors, [...]

New 800A/1200V Full SiC Module

Posted on 06 May 2015

      By using SiC-based semiconductors the performance of power electronic systems can be drastically improved. By Eckhard Thal, Koichi Masuda and Eugen Wiesner, Mitsubishi Electric Europe B.V., Ratingen, Germany The evolution of SiC technology in power modules and its principle loss reduction potential are shown in Figure 1. Mitsubishi has developed two new [...]

Optimizing Control of Both the Synchronous Rectifier and Primary MOSFET in Flyback Power Supplies Improves Efficiency and Reliability

Posted on 04 May 2015

      Overcomes the limitations of Schottky diode rectifier designs without the complexity of traditional synchronous rectifier implementations By Silvestro Fimiani, Senior Product Manager, Power Integrations Designers of flyback power supplies have generally used Schottky diode rectification in the output stage due to its simplicity and low cost. Diode-rectifier designs have proven adequate in [...]

Ensuring System Efficiency

Posted on 29 April 2015

      Four Key Features to look for in a GaN-Ready Magnetics Supplier The dramatic rise in the popularity of Galium Nitride (GaN) switching technology is due to the very significant benefits it provides. Highly efficient GaN devices offer high dielectric strength, high operating temperatures, high current density, high-speed switching and exceptional carrier mobility. [...]

Performance Comparisons of SiC Transistors, GaN Cascodes and Si - Coolmos in SMPS

Posted on 20 April 2015

      How do available SiC - transistors and GaN cascodes stack up against Si - Coolmos in real-world SMPS? Proven by extensive tests, neither SiC transistors nor GaN cascodes beat Si Coolmos. Alleged advantages of GaN are due to the cascode, not the material. By Dr. – Ing. Artur Seibt, Vienna Introduction and [...]

Using “Normally on” JFETs in Power Systems

Posted on 17 April 2015

      A “normally on” device can get short shrift at times due to the negative turn off voltage requirement. Supply Voltage sequencing and single point failures tend to make designers skittish, and thus bypassing the die size/resistivity advantages of “normally on” devices, and the capacitive advantages that go along with using devices with [...]