Author Archives | Tursky

Tursky - who has written 30 posts on PowerGuru - Power Electronics Information Portal.

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Power Module Basics

Posted on 21 May 2019

              Under normal circumstances, power electronics circuitry does not contain one single power semiconductor component but is composed of several components. When discrete devices are used, several of them, including their corresponding heat sinks, must be combined into one assembly to create a bundle of semiconductors that serve to [...]

Sintering Technology

Posted on 17 April 2019

              Sintering combines two fine grained ceramic or metallic materials, usually under high pressure, at temperatures below the melting point of both materials. At a temperature of around 250°C, fine silver powder is sintered under high pressure to form a low-porous silver bond layer between the parts to be [...]

IGBT Characteristic Curve

Overload Behavior of Power Semiconductor Devices

Posted on 03 April 2019

    Power semiconductor device overload can be caused by excessive current or by excessive voltage. In both cases, possible destruction of the component is caused by (local) overheating of the silicon. Destruction of the elements can be prevented by appropriately limiting the duration of the overload.     Limiting Reverse Voltage using the Avalanche [...]

Metallization Processes for Semiconductor Devices

Posted on 28 February 2019

              Metallization of semiconductors is vital for the connetivity of external conductors, e.g., cables, busbars, etc. The metal plating on the semiconductor is used to create Schottky contacts or Ohmic contacts. Schottky contacts are metallic semiconductor contacts with a rectifying effect. Only majority charge carriers are involved in this [...]

Masking and Structuring Silicon

Posted on 26 February 2019

                    Masked Diffusion When producing semiconductor devices, it is necessary to limit the areas that the dopant used is able to penetrate. In order for the dopant to penetrate into the silicon at given locations, the silicon surface is covered using a mask, usually composed of [...]

ion radiation

Charge Carrier Lifetime in Semiconductors

Posted on 11 February 2019

              Charge carrier lifetime refers to the average time taken for a minority charge carrier (electron or hole) to recombine with one of its counterparts (with opposite charge). The ability to calibrate charge carrier lifetime in semiconductors provides a means of controlling certain properties when producing power semiconductor devices. [...]

Reliability Engineering in Power Electronics

Posted on 11 January 2019

    Reliability in power electronics is the extent to which a system can be expected to perform its intended function within the required tolerances. In other words, reliability is the system's ability to operate correctly under certain conditions over a given time period.     The definition of failure rate (FR) to be used [...]

Dynamic Properties of MOSFETs

Posted on 07 January 2019

              Power MOSFET properties are strongly influenced by the parasitic elements in the real structure. Forward off-state and avalanche breakdown If a positive drain-source voltage VDS and a gate-source voltage VGS below the gate-source threshold voltage level VGS(th) is applied, only a very small cut-off current IDSS will flow [...]

Semiconductor Precursors

Posted on 27 December 2019

  Since the advent of electrical engineering, common tasks faced by the electrical engineer have included the conversion of mechanical energy to electrical energy, conversion of electrical energy to other forms of energy such as mechanical energy, heat, light, or other electromagnetic radiation. One challenge that has been of particular importance throughout the history of [...]

Doping silicon wafers

Doping Silicon Wafers

Posted on 18 December 2019

  Turning silicon into semiconductor chips used to create integrated circuits is a complex procedure that must be carried out meticulously. A single silicon wafer may undergo many successive processes to achieve the desired layers of conductor, semiconductor, and insulating material needed to produce the required circuitry. The wafer undergoes various steps to become properly [...]