Category | Bodo’s Power

2nd Generation Si and SiC SGTOs for Extreme Pulse Power and Sub-Microsecond Switching

Posted on 01 August 2014

      Through a series of ARL Cooperative Agreements, Silicon Power has been able to optimize Silicon and SiC Super GTOs (SGTOs) for extreme pulse power, operating in excess of 10kA/cm2, about a 10-fold higher density than the traditional thyristor. Moreover, SGTO active turn-off also provides the opportunity for supporting recovery voltage times (tq) [...]

Parameters and Characteristics of 1700V Planar NPT+ IGBT with Enhanced Injection for High Power Modules

Posted on 31 July 2014

      Development results of 1700V NPT+ IGBT chips for modules with commutation power from 0,15 up to 4 MW By P. Mashevich and T. Kritskaya, Angstrem JSC; V. Martynenko; V. Muskatinev, A. Bormotov, M. Togaev, Electrovipryamitel JSC Introduction Power modules on the base of IGBT and FRD are currently the most common components [...]

1200V SiC Hybrid IGBT Modules for High Frequency Applications

Posted on 29 July 2014

      Dedicated IGBT-modules for high switching frequency operation have been successfully introduced to the market over the past years. Typical applications are X-ray generators, CT-scanners, induction heating, welding, plasma cutters or inverters for isolated or contactless electrical power conversion. By Eckhard Thal, Mitsubishi Electric Europe B.V., Ratingen, Germany The switching frequency in those [...]

Ensure Your System Robustness by Choosing Hard Commutation Rugged Medium Voltage MOSFETs

Posted on 28 July 2014

      Understanding hard commutation event and how to get the best system reliability and performance using Infineon’s new 200V and 250V devices By Alan Huang, Application Engineer, Infineon Technologies AG Today, wide range of energy-critical applications can benefit from trench MOSFETs’ low Figure of Merit (RDS(on) x Qg) because of the MOSFETs’ high [...]

Three Stability Assessment Methods Every Engineer Should Know About

Posted on 09 July 2014

      Many engineers are familiar with the Bode plot as an effective stability assessment method. However, some authors suggest and even teach that the Bode plot is the only method needed. This article shows why this thinking is short-sighted. A single, low cost instrument that can produce Bode plots, as well as two [...]

Sensor Module Ensures Optimum Battery Utilisation in Heavy-Duty Vehicles, called omniMoves

Posted on 08 July 2014

      Precise battery diagnostics makes maneuvering large, heavy-duty loads easier Isabellenhütte’s shunt-based IVT Modular sensor module measures the basic battery components’ current and voltage with an error rate of less than 0.1 per cent. This exceptional degree of accuracy provides for consistent power control and efficient utilisation, especially for high-capacity battery systems. This [...]

Efficient Microcontroller Peripheral Modeling with PLECS

Posted on 01 July 2014

      Microcontrollers play an integral part in controlling modern power electronic systems. Often, for system level simulations, the peripheral modules are simplified to improve overall simulation efficiency. In this study, efficient modeling of high fidelity peripheral models is discussed and the advantages of simulating power electronic systems with these models have been investigated [...]

Precise Evaluation of Input, Output, and Reverse Transfer Capacitances of Power Devices

Posted on 30 June 2014

      Increasing importance of capacitance measurement The switching frequency in power conversion circuits is increasing. This is primarily to reduce the size of passive components such as smoothing capacitors and reactors. Accurate characterization of device parameters affecting switching performance become more important as higher switching frequencies increase power circuit switching losses. By Hisao [...]

Freewheeling Diodes for High Performance Inverter Systems

Posted on 25 June 2014

      The engineers at Proton-Electrotex developed freewheeling diodes to operate at the reverse recovery process with high change rate of reverse recovery current (dIrrm/dt), and high power supply reverse voltage (VR) by means of proton irradiation technology, sintering technology and implementation of n’-buffer. The diodes are designed to be used as reverse diodes [...]

7th Developer Forum on Rechargeable Battery

Posted on 16 June 2014

      For three days the tiny city Aschaffenburg was the capital of the battery world. In recent years, the rechargeable battery developer forum with trade show organised by has developed into one of the most important European sector meetings for all rechargeable battery manufacturers and their suppliers and customers. By Marisa Robles [...]