Category | Bodo’s Power

DC-Link Capacitor Technology Comparison

Posted on 20 May 2015

      Aluminum Electrolytic vs. Film Capacitors By Dr. Arne Albertsen, Jianghai Europe Electronic Components GmbH Introduction The progress in semiconductor design sets the trend in current and future devices of power electronics: it manifests itself particularly in smaller dimensions, as well as in higher voltages and switching frequencies. Referring to intermediate circuit capacitors, [...]

SiC-Diodes, SiC-MOSFETs and Gate Driver IC

Posted on 18 May 2015

      The best use of SiC devices and applications are shown. Uninterruptible Power Supplies (UPS) will be described in more detail. Additional to SiC, a portfolio of very fast, high output current and high common noise immunity Gate Drivers will be introduced. Those devices can drive Si-SJFET and -IGBTs but are especially perfectly [...]

New 800A/1200V Full SiC Module

Posted on 06 May 2015

      By using SiC-based semiconductors the performance of power electronic systems can be drastically improved. By Eckhard Thal, Koichi Masuda and Eugen Wiesner, Mitsubishi Electric Europe B.V., Ratingen, Germany The evolution of SiC technology in power modules and its principle loss reduction potential are shown in Figure 1. Mitsubishi has developed two new [...]

Optimizing Control of Both the Synchronous Rectifier and Primary MOSFET in Flyback Power Supplies Improves Efficiency and Reliability

Posted on 04 May 2015

      Overcomes the limitations of Schottky diode rectifier designs without the complexity of traditional synchronous rectifier implementations By Silvestro Fimiani, Senior Product Manager, Power Integrations Designers of flyback power supplies have generally used Schottky diode rectification in the output stage due to its simplicity and low cost. Diode-rectifier designs have proven adequate in [...]

Ensuring System Efficiency

Posted on 29 April 2015

      Four Key Features to look for in a GaN-Ready Magnetics Supplier The dramatic rise in the popularity of Galium Nitride (GaN) switching technology is due to the very significant benefits it provides. Highly efficient GaN devices offer high dielectric strength, high operating temperatures, high current density, high-speed switching and exceptional carrier mobility. [...]

Performance Comparisons of SiC Transistors, GaN Cascodes and Si - Coolmos in SMPS

Posted on 20 April 2015

      How do available SiC - transistors and GaN cascodes stack up against Si - Coolmos in real-world SMPS? Proven by extensive tests, neither SiC transistors nor GaN cascodes beat Si Coolmos. Alleged advantages of GaN are due to the cascode, not the material. By Dr. – Ing. Artur Seibt, Vienna Introduction and [...]

Using “Normally on” JFETs in Power Systems

Posted on 17 April 2015

      A “normally on” device can get short shrift at times due to the negative turn off voltage requirement. Supply Voltage sequencing and single point failures tend to make designers skittish, and thus bypassing the die size/resistivity advantages of “normally on” devices, and the capacitive advantages that go along with using devices with [...]

Web-based Simulation Tool to Simplify IGBT Selection and Thermal Design in Minutes

Posted on 16 April 2015

      By Kristofer Eberle, Plexim and Jiangmin Chunyu and Andrea Gorgerino, International Rectifier, An Infineon Technologies Company For a given voltage, current rating and package type, there can be many possible IGBT candidates. Additionally, the designer has to ensure that the power stage operates reliably within the thermal constraints. To alleviate these two [...]

Get to Market Faster with Digital Power

Posted on 15 April 2015

      In our competitive world, being first to market gives your product that slim edge that can mean the difference between success and failure. Everyone knows that companies generate profits by getting their products to the market faster. It’s why we have simulation and emulation tools, logic synthesizers, software debuggers and the like. [...]

Boost Your System!

Posted on 14 April 2015

      Defining the Future of IGBT High-Power Modules Continued progress in the performance of power semiconductors drives demand for corresponding improvements in packaging technology. Infineon has contributed to this evolution across more than two decades. With its announcement of “The Answer” in 2014, power system designers now have a path to meet ever [...]