Category | Bodo’s Power

The Future of Power Semiconductors

Posted on 20 April 2016

      Rugged and High Performing Silicon Carbide Transistors The use of SiC based power semiconductor solutions has shown a huge increase over the last years, it is a revolution to rely on. Driving forces behind this market development are the following trends: energy saving, size reduction, system integration and improved reliability. By Dr. [...]

LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

Posted on 09 March 2016

      One year ago ABB presented the LinPak, a new IGBT module generation that is the enabler for lowest overall stray inductance. In the meantime the LinPak module with a footprint of 100 x 140 mm 2 has established itself as a new standard. The ABB lineup of LinPak modules starts with a [...]

System Solution: “SiC-Inverter for Industrial Motor Drive”

Posted on 07 March 2016

      In many power electronics-based applications such as industrial motor control units, requirements like space, weight and efficiency play an increasing role. Product development and manufacturing expenses should remain low while the design effort should result in more compact systems and, at the same time, product quality and reliability should be guaranteed. By [...]

6500 V X-Series High Voltage IGBT Modules

Posted on 10 February 2016

      The 6500 V X-Series high current IGBT power module breaches the technological barrier for operating at 150 °C junction temperature by employing the 7th Generation IGBT and Diode chip-sets. This could potentially unlock the possibility of discovering new horizons in inverter design. By Eugen Wiesner and Eugen Stumpf MITSUBISHI ELECTRIC EUROPE B. [...]

SiC MOSFETs Enable High Frequency in High Power Conversion Systems

Posted on 05 February 2016

      Enhancing the performance of traditional IGBT-module-based power assemblies with SiC modules In recent years, 1.2kV and 1.7kV silicon carbide (SiC) MOSFETs have become a real alternative for power converter designers who currently use IGBTs. To date, the majority of the SiC MOSFET design wins have occurred in power converters in the low [...]

IGCT - A Highly Efficient Device with Continuing Great Success in High Power Applications

Posted on 03 February 2016

      For reliable and efficient operation in high power applications, the Integrated Gate Turn-off Thyristor (IGCT) is the ideal device. The main advantage besides high reliability is the low device losses resulting in low system losses. In this article we compare IGCT and IGBT based 3-level converters with respect to device and system [...]

PLECS Goes Real-Time

Posted on 01 February 2016

      Plexim is expanding its PLECS product line with real-time hardware to provide a complete and one-stop solution for modern power electronics development teams. By Beat Arnet and Felix Prausse, Plexim GmbH Introduction Designing power converters is a complex task requiring advanced tools and processes. Power converters are sophisticated systems composed of multiple [...]

Reading Between the Lines

Posted on 20 January 2016

      Using data sheets correctly when selecting resistors When selecting a resistor for your application, there is more to bear in mind than you might think. In order to make a preliminary choice using a product data sheet, developers need certain background information and have to calculate some dimensions themselves. An example shows [...]

Wireless Charging: Power without Boundaries Becomes Available to the Masses

Posted on 14 January 2016

      Wireless charging has been in the wilderness, hidden in a chasm until standardisation, strategic partnerships and technology integration recently gathered pace. The market is predicted to become worth billions of dollars in the next few years - yet it has been the domain of a few Tier-1 companies as the resources and [...]

Advantages of the 1200 V SiC Schottky Diode with MPS Design

Posted on 22 December 2015

      Single- and three-phase inverters in solar, UPS or energy storage applications today demand for high efficiency, compact designs and extended reliability. Inverter implementation in these applications is limited by silicon devices’ high dynamic losses when operated at 1200 V. Alternative designs using 600 V/650 V devices can partially improve efficiency. However, they [...]