Category | February

6500 V X-Series High Voltage IGBT Modules

Posted on 10 February 2016

      The 6500 V X-Series high current IGBT power module breaches the technological barrier for operating at 150 °C junction temperature by employing the 7th Generation IGBT and Diode chip-sets. This could potentially unlock the possibility of discovering new horizons in inverter design. By Eugen Wiesner and Eugen Stumpf MITSUBISHI ELECTRIC EUROPE B. [...]

SiC MOSFETs Enable High Frequency in High Power Conversion Systems

Posted on 05 February 2016

      Enhancing the performance of traditional IGBT-module-based power assemblies with SiC modules In recent years, 1.2kV and 1.7kV silicon carbide (SiC) MOSFETs have become a real alternative for power converter designers who currently use IGBTs. To date, the majority of the SiC MOSFET design wins have occurred in power converters in the low [...]

IGCT - A Highly Efficient Device with Continuing Great Success in High Power Applications

Posted on 03 February 2016

      For reliable and efficient operation in high power applications, the Integrated Gate Turn-off Thyristor (IGCT) is the ideal device. The main advantage besides high reliability is the low device losses resulting in low system losses. In this article we compare IGCT and IGBT based 3-level converters with respect to device and system [...]

PLECS Goes Real-Time

Posted on 01 February 2016

      Plexim is expanding its PLECS product line with real-time hardware to provide a complete and one-stop solution for modern power electronics development teams. By Beat Arnet and Felix Prausse, Plexim GmbH Introduction Designing power converters is a complex task requiring advanced tools and processes. Power converters are sophisticated systems composed of multiple [...]