Category | Reliability

SiC: The Reliability Aspect and Practical Experience (Test)

Posted on 18 September 2014

      By Jochen Hüskens, Product Marketing Manager, ROHM Semiconductor GmbH Reliability of SiC SBDs Obviously, breakdown issues in the outer periphery structure of SiCSBD caused by high dV/dt were reported for conventional products but such breakdowns have not been observed in ROHM’s SiC SBDs at dV/dt up to 50 kV/us. In life tests, [...]