Category | High Power Switch

Silicon Carbide MOSFETs Provide Ultimate Energy Efficiency and Easy Design In

Posted on 02 July 2019

      The SiC MOSFET also has significant advantages including simple drive circuit The silicon carbide (SiC) MOSFET has unique capabilities that make it a superior switch when compared to its silicon counterparts. By nature of its material advantages, SiC MOSFETs provide lower switching loss, lower on-resistance across its operating temperature range, and superior [...]

The Silicon Carbide JFET in 3 Phase Power Supplies

Posted on 02 July 2019

      A technology step for higher efficiency and lower cost Power supplies in the kW category are used in a huge range of industrial and high reliability applications. Much effort has gone into optimizing the efficiency, reliability and cost of these power supplies, but advances in recent years have been somewhat incremental. To [...]

Root Causes of Failures of Disc Type Bipolar Power Semiconductor Devices

Posted on 29 June 2019

      In spite of simplicity in schematic design of the circuit with power thyristors and diodes application, practically a customer deals with a lot of details that should be taken into account to ensure reliable and continuous operation of power semiconductor devices (PSD). Basically all details of PSD application are determined by design [...]

Fast Switching Semiconductors, a Blessing or a Curse?

Posted on 29 June 2019

      Inside losses need to be cooled away In order to fulfill the grid codes for power quality and to eliminate bulky filters, power engineers are seeking switches with lower switching losses that allow operation of power converters at higher switching frequencies. The switching losses of high power semiconductors can not be infinitely [...]

High-Voltage Power Thyristors with Built-In Protective Elements in the Semiconductor Structure in Case of Emergency Mode

Posted on 29 June 2019

      Nowadays converter equipment based on fully controlled semiconductors switches (IGBT, GTO, IGCT) have developed dramatically in many fields of application, especially in high power and high voltage power electronics but in fact the implementation of “conventional” power thyristors are still technically justified and in demand. By P.G. Dermenzhi, Y.M. Loktaev, A.M. Surma, [...]

New High-Voltage Power Thyristor with Built-In Protective Elements in the Semiconductor Structure in Case of Emergency Mode: Excess-Voltage Protection

Posted on 29 June 2019

      Despite of the possibility of “outer” protection, usage of thyristors with built-in in the semiconductor structure elements for excess-voltage protection can also be attractive to customers if pricewise such thyristor will be on the same level with the standard one. There are two types of protective elements different in principle of operation. [...]

The Grey Area

Posted on 29 June 2019

      Access at your own risk Data sheet specifications for power semiconductors are values which are assured by the manufacturers. But they can only be used to a limited extent for dimensioning and calculation. By Thomas Schneider (Dipl.Ing.FH), GvA Leistungselektronik GmbH, Mannheim Even semiconductor parameters which at first glance appear mundane and often [...]

New Power Semiconductor Devices

Posted on 29 June 2019

      A practically all range of power semiconductors Proton-Electrotex JSC is one of the leading Russian companies in terms of development and production of high-power semiconductor devices: diodes, thyristors, and modules on their base, heat-sinks. By Loktaev Yu. M., Stavtsev A.V., Surma A.M., and Chernikov A.A., Proton-Electrotex   The released production covers practically [...]

Features of High-Voltage Thyristors for Snubberless Stacks

Posted on 29 June 2019

      Influence of design and technology features of high-voltage n+-p-n--p thyristors (impurity doping of p-base and p-emitter, carrier life time in layers) on reverse recovery characteristics (reverse recovery time and charge, reverse recovery current form, temperature dependence of the mentioned characteristics). By Anatoly Chernikov, Vitaly Gubarev, Alexander Stavtsev, Alexey Surma, and Igor Vetrov, [...]

Modern Production of Power Semiconductor Devices – Flexible Production

Posted on 29 June 2019

      In spite of uneasy financial and economic situation of the latest years, power semiconductors nowadays is in one of the most developing directions of the world industry. And it’s not so surprising, because only power electronics helps solving key questions in increase of energy efficiency. And this problem should be solved by [...]