Category | Device Basics

Closed loop sensor with flux-gate technology

Posted on 15 January 2014

  Flux gate sensor The flux gate principle is familiar from the flux-gate magnetometers. These were developed during the second world war and used by low flying aircraft to detect submarines. These days fluxgate sensors are used in gyro compasses and in lab equipment to measure remanent magnetism for example. The flux-gate magnetometer can measure [...]

Angular Position Sensors (Shaft Angle Transducer)

Posted on 09 December 2013

  Almost every machine or industrial process contains one or more rotating shafts. It is therefore important in most instrumentation systems or control systems to be able to measure the exact shaft angle of a mechanical shaft. This angular data can be used to control position, speed or acceleration of a mechanism. Standard shaft angle [...]

Hall Effect Sensors

Posted on 17 September 2013

  Hall effect If we place a current carrying conductor or semiconductor in a perpendicular magnetic field B (fig. 1) then an electric field arises perpendicular to the I-B surface. This effect is known as the Hall-effect. This effect was discovered in 1879 by the American physicist Edwin Herbert Hall. Figure 1. Hall effect Consider [...]

Opto-electronics

Posted on 04 September 2013

  LED (Light Emitting Diode) The light emitting diode (LED) has been used for years as a signal lamp, as number indicator and as a light emitting transmitter in an opto-coupler. In recent years the LED is becoming ever more popular as a light source. The operating principle of the LED rests on the release [...]

Power Module Basics

Posted on 21 May 2013

              Under normal circumstances, power electronics circuitry does not contain one single power semiconductor component but is composed of several components. When discrete devices are used, several of them, including their corresponding heat sinks, must be combined into one assembly to create a bundle of semiconductors that serve to [...]

Basic Considerations for Semiconductor Protection with Fuses

Posted on 23 April 2013

              Solid state devices have progressed through several generations of sophistication since their introduction in the 1940s. Fuse designs have changed to match solid state protection demands. The protection task seems simple - choose a fuse of correct voltage and ampere rating which will protect a solid state device [...]

Driver Units for Thyristors

Posted on 15 April 2013

              The link between the electronic control components of a converter and the thyristors is the driver (driver circuit). The purpose of the driver is to generate suitable current pulses in order to drive the thyristors; the frequency, phase length, sequence, etc., of these pulses are affected by the [...]

Development of MOSFET Technologies

Posted on 12 April 2013

              Power electronics largely use the vertical structure, where gate and source terminals are located on the chip surface and the drain terminal is on the underside of the chip. The load current is conducted vertically through the chip outside the channel. The VDMOSFET version ( Vertical Double Diffused [...]

IGBT Characteristic Curve

Overload Behavior of Power Semiconductor Devices

Posted on 03 April 2013

    Power semiconductor device overload can be caused by excessive current or by excessive voltage. In both cases, possible destruction of the component is caused by (local) overheating of the silicon. Destruction of the elements can be prevented by appropriately limiting the duration of the overload.     Limiting Reverse Voltage using the Avalanche [...]

Structure and Functional Principle of Thyristors

Posted on 27 March 2013

              A thyristor is a semiconductor component with a minimum of three pn-junctions which can be switched from off-state to on-state. Often, "thyristor" specifically designates the reverse-blocking triode thyristor which cannot be switched in reverse direction but blocks. In addition to the two terminals that a diode provides, a [...]