Category | Power Electronics Basics

Driver Units for Thyristors

Posted on 15 April 2020

              The link between the electronic control components of a converter and the thyristors is the driver (driver circuit). The purpose of the driver is to generate suitable current pulses in order to drive the thyristors; the frequency, phase length, sequence, etc., of these pulses are affected by the [...]

Development of MOSFET Technologies

Posted on 12 April 2020

              Power electronics largely use the vertical structure, where gate and source terminals are located on the chip surface and the drain terminal is on the underside of the chip. The load current is conducted vertically through the chip outside the channel. The VDMOSFET version ( Vertical Double Diffused [...]

Effects of Humidity on Power Electronics Design

Posted on 08 April 2020

                Air humidity is likely to condense at all parts of a device if the device temperature differs from the air temperature to a certain extent. In extreme cases, condensation causes the generation and accumulation of water droplets which might be drawn to moisture sensitive components such as [...]

Overload Behavior of Power Semiconductor Devices

Posted on 03 April 2020

    Power semiconductor device overload can be caused by excessive current or by excessive voltage. In both cases, possible destruction of the component is caused by (local) overheating of the silicon. Destruction of the elements can be prevented by appropriately limiting the duration of the overload.     Limiting Reverse Voltage using the Avalanche [...]

Structure and Functional Principle of Thyristors

Posted on 27 March 2020

              A thyristor is a semiconductor component with a minimum of three pn-junctions which can be switched from off-state to on-state. Often, "thyristor" specifically designates the reverse-blocking triode thyristor which cannot be switched in reverse direction but blocks. In addition to the two terminals that a diode provides, a [...]

Series and Parallel Connection of Diodes and Thyristors

Posted on 25 March 2020

                    Parallel connection of thyristors In parallel thyristor circuit arrangements, homogenous current distribution is required from the moment of firing and throughout the entire current flow time. For this purpose, steeply rising trigger pulses of sufficient amplitude, as well as symmetrical line impedances in the main [...]

Solar Power System Control and Safety

Posted on 20 March 2020

  The Copenhagener climatic conference in 2009 and the earlier Kyoto protocol (adopted in 1997 and enforced as of 2005) committed different national governments to decrease their CO2 emissions. One of the possible ways to achieve these goals is to increase the production of sustainable energy and to issue a grant for every initiative taken. [...]

Metallization Processes for Semiconductor Devices

Posted on 28 February 2020

              Metallization of semiconductors is vital for the connetivity of external conductors, e.g., cables, busbars, etc. The metal plating on the semiconductor is used to create Schottky contacts or Ohmic contacts. Schottky contacts are metallic semiconductor contacts with a rectifying effect. Only majority charge carriers are involved in this [...]

Masking and Structuring Silicon

Posted on 26 February 2020

                    Masked Diffusion When producing semiconductor devices, it is necessary to limit the areas that the dopant used is able to penetrate. In order for the dopant to penetrate into the silicon at given locations, the silicon surface is covered using a mask, usually composed of [...]

Classification of Film Capacitors

Posted on 20 February 2020

              Film capacitors, also referred to as FK capacitors, are fixed capacitors with plastic film dielectrics. Film capacitors are grouped and designated according to the dielectric used since the dielectric in use has a great effect in determining film capacitor characteristics. Film capacitors are classified further in terms of [...]