Category | Power Devices

Synchronous Buck DC/DC Converter IC Featuring the Industry’s Lowest Minimum ON-Time

Posted on 23 March 2016

  Contributes to greater miniaturization, stable operation, and reduced customer design load in the automotive and industrial markets ROHM has recently announced the development of the BD51180TL, a step-down DC/DC converter featuring the lowest minimum ON time in the industry, making it ideal for high-power applications such as industrial equipment and automotive systems. In recent [...]

Boost DC-DC converter IC

ROHM’s Compact, High-Efficiency, High Power Synchronous Boost DC/DC Converter IC

Posted on 10 March 2016

  Contributes to improved performance and longer battery life in portables such as smartphones and tablets ROHM has recently announced the availability of a compact, high-efficiency, high power synchronous boost DC/DC converter IC optimized for single-cell battery applications. Many of today’s portable devices (i.e. smartphones and tablets) are driven by single-cell li-ion batteries that deliver [...]

ROHM Expands Its Full SiC Power Module Lineup - New 1200V/300A model ideal for high power applications

Posted on 03 December 2015

  ROHM has recently announced the development of a 1200V/300A full SiC power module designed for inverters and converters in solar power conditioners and industrial equipment. The 300A rated current makes the BSM300D12P2E001 suitable for high power applications such as large-capacity power supplies for industrial equipment. In addition, 77% lower switching loss vs. conventional IGBT [...]

Closed loop sensor with flux-gate technology

Posted on 15 January 2014

  Flux gate sensor The flux gate principle is familiar from the flux-gate magnetometers. These were developed during the second world war and used by low flying aircraft to detect submarines. These days fluxgate sensors are used in gyro compasses and in lab equipment to measure remanent magnetism for example. The flux-gate magnetometer can measure [...]

3% import tax for power electronics modules to China

Posted on 07 January 2014

  Based on a recent publication (in Chinese) released on the 16th of December 2013, it seems that the Chinese government has introduced to its tariff policies a 3% customs duty for importing power electronics modules into China. There is a general tariff of 10% applied, e.g. on drivers, and a temporary, or provisional, tariff [...]

Angular Position Sensors (Shaft Angle Transducer)

Posted on 09 December 2013

  Almost every machine or industrial process contains one or more rotating shafts. It is therefore important in most instrumentation systems or control systems to be able to measure the exact shaft angle of a mechanical shaft. This angular data can be used to control position, speed or acceleration of a mechanism. Standard shaft angle [...]

E-RA ready for start at Nürburgring Nordschleife

E-RA improves lap time with VISEDO power

Posted on 09 October 2013

              The electric supercar E-RA (Electric RaceAbout) was able to improve the lap time on the Nordschleife track by an impressive 20 seconds to 8:23.56. The electric vehicle is powered by VISEDO PowerMASTER™ inverters and motors based on VISEDO PowerDRUM™ technology. One of the key improvements from the last [...]

Make or buy: the IGBT assembly conundrum

Posted on 30 September 2013

              'Focus on our strengths' is a motto of our times. It’s likely to be heard in the financial results of a giant multinational, or seen in the business plan of the newest startup. It leads in different directions depending on just what those strengths are. In power electronics, [...]

Hall Effect Sensors

Posted on 17 September 2013

  Hall effect If we place a current carrying conductor or semiconductor in a perpendicular magnetic field B (fig. 1) then an electric field arises perpendicular to the I-B surface. This effect is known as the Hall-effect. This effect was discovered in 1879 by the American physicist Edwin Herbert Hall. Figure 1. Hall effect Consider [...]

Low loss, High Current SiC MOSFET Module

Posted on 11 September 2013

  ROHM Semiconductor introduced 1200V 120A full SiC (Silicon Carbide) power module composed of SiC Schottky barrier diodes (SBDs) and SiC MOSFETs. When compared with conventional IGBT modules, this module can reduce switching loss by 85%. However, this module is not necessarily enough to drive higher current, which is required from many industrial applications. This [...]