Category | Diodes

3% import tax for power electronics modules to China

Posted on 07 January 2014

  Based on a recent publication (in Chinese) released on the 16th of December 2013, it seems that the Chinese government has introduced to its tariff policies a 3% customs duty for importing power electronics modules into China. There is a general tariff of 10% applied, e.g. on drivers, and a temporary, or provisional, tariff [...]


Posted on 04 September 2013

  LED (Light Emitting Diode) The light emitting diode (LED) has been used for years as a signal lamp, as number indicator and as a light emitting transmitter in an opto-coupler. In recent years the LED is becoming ever more popular as a light source. The operating principle of the LED rests on the release [...]

650V Rapid Diode for Industrial Applications

Posted on 02 May 2013

              With the introduction of Rapid Diodes, Infineon Technologies enters the hyperfast fast high voltage silicon diode market. Based on ultrathin wafer technology, two families are released to cover different application requirements. Rapid 1 is used in low switching applications (up to 40 kHz) whilst the Rapid 2 is [...]

Series and Parallel Connection of Diodes and Thyristors

Posted on 25 March 2013

                    Parallel connection of thyristors In parallel thyristor circuit arrangements, homogenous current distribution is required from the moment of firing and throughout the entire current flow time. For this purpose, steeply rising trigger pulses of sufficient amplitude, as well as symmetrical line impedances in the main [...]

IGBT and Diode Switching Loss Calculation

Posted on 08 March 2013

              In power electronics, both IGBT and diodes are operated as switches, taking on various static and dynamic states in cycles. In any of these states, one power dissipation or energy dissipation component is generated, heating the semiconductor and adding to the total power losses of the switch. Suitable [...]

Mounting of Capsule Diodes and Thyristors (disc cells)

Posted on 22 February 2013

  Disc cell housings possess two thermal contact surfaces. For maximum current capacity yields, double-sided cooling (DSC) is usually used. For this purpose, the cell is clamped between two heat sinks using a clamping fixture as described below. In lower load applications, single-sided cooling (SSC) is used as a standard practice as well. The electrical [...]

Dynamic Behavior of Freewheeling and Snubber Diodes

Posted on 16 January 2013

                    Turn-On Behavior When a diode is turned on, it has to overcome the resistance of the low-doped base. The turn-on peak voltage thus increases proportionate to the base width wB. The turn-on peak voltage becomes especially critical if a significant base width wB has to [...]

Characteristics of Schottky Diodes

Posted on 02 January 2013

              Schottky diodes are unipolar components; only one type of charge carrier is responsible for current transmission. While the on-state current is flowing, no excess charge which could appear as storage charge when the diode is turned off (reversed polarity) is built up. This means that Schottky diodes have [...]

Example of the reverse current of a 1700 V CAL diode, parameter T j

Static Behavior of Fast Diodes

Posted on 04 December 2012

              Modern fast switching devices require fast diodes as freewheeling diodes in the power circuit. In the predominant applications which use inductive loads, the freewheeling diode is commutated from conductive to blocking state with every turn-on operation of the switch. Here, storage charges are to be depleted gently in [...]

P-N Junction Diode and Circuit Symbol

Structure and Functional Behavior of PIN Diodes

Posted on 29 November 2012

              A P-N Junction is essentially an excellent diode. A few of the factors considered when preparing a bipolar diode include the device size, the doping geometry and structure, and connections and packaging. PIN diodes exist in two types of designs - epitaxial design and diffused design. Figure 1. [...]