Category | IGBT

Overload and Short Circuit Behavior of IGBTs and MOSFETs

Posted on 28 January 2020

                    Overload Essentially, the switching and on-state behavior of IGBTs and MOSFETs under overload does not differ from "standard operation" under rated conditions. In order not to exceed the maximum junction temperature and to ensure safe operation, the overload range has to be restricted since increased [...]

IGBT Development - Then and Now

Posted on 09 January 2020

              Since IGBTs were invented, their basic principles have been utilized in different concepts. IGBT chips have therefore been further developed in separate ways, pursuing the objectives and taking the directions outlined for chip technology. In order to both reduce costs by reducing (shrinking) chip area and to get [...]

IGBT Technologies

Posted on 14 December 2020

              Below is an outline of several IGBT technologies that are in common use in the field of power electronics. PT concept The first "Punch Through" (PT) concept, which is still used today as a result of continuous developments, uses a p+ substrate as a base material and n+ [...]

Application Fields and Current Performance Limits for Power Semiconductors

Posted on 07 December 2020

  The development of power semiconductors saw the onset of lasting success for power electronics across all fields of electrical engineering. Given the ever increasing call for resource conservation (e.g. energy saving agenda), the use of renewable energies (e.g.wind power and photovoltaics) and the need for alternatives to fossil fuels (e.g. electric and hybrid drives [...]

Gate Resistors – Principles and Applications

Posted on 23 July 2020

    This article provides information on the use of gate resistors (RG) to control IGBT switching. The information given in this application note contains tips only and does not constitute complete design rules; the information is not exhaustive. The responsibility for proper design remains with the user.   Introduction The switching behaviour of power [...]

Criteria for Successful Selection of IGBT and MOSFET Modules

Posted on 15 April 2020

  Below are several important criteria that should be considered when selecting IGBT and MOSFET modules. 1.) Operating voltage Blocking voltage Since most power modules are used in DC voltage links which are AC-voltage supplied via single-phase or three-phase rectifier bridges, the blocking voltages of IGBT and MOSFET modules are adjusted to common line voltage [...]

I²t of IGBT and Other Power Transistor Circuits

Posted on 12 March 2020

              I²t of IGBT and other power transistor circuits When the current increases suddenly in a power transistor due to a short-circuit, the collector-emitter voltage increases immediately to a high value which gives a rapid increase in internal power dissipation and failure of the transistor. Electronic means of fault [...]

Infineon Reference book IGBT Modules printed version

Posted on 02 March 2020

  Today, IGBT and power MOSFET modules are instrumental in power electronic systems and are increasingly gaining ground in new fields. This goes hand in hand with the ever increasing need for rectifier diodes and thyristors as cost-efficient means of connecting to the power supply grid. This application manual is intended to assist users with [...]

Teaching Tool for IGBTs and Thyristors

Posted on 03 February 2020

  For educational purposes the 'SemiTeach IGBT'  and 'SemiTeach Thyristor' are ideal tools for universities, professional schools, and laboratorities to simulate and demonstrate curcuits. One stack can simulate almost all existing industrial applications: 3-phase inverter+brake chopper; buck or boost converter; single phase inverter; single or 3-phase rectifier.   Features: Multi-function IGBT converter Transparent enclosure to [...]

Comparing the Incomparable - Understanding and Comparing IGBT Module Datasheets

Posted on 17 March 2020

  This might sound somewhat overdone, but comparing IGBT modules using datasheets is not as easy at is might appear. A rough comparison can, of course, be made using the component blocking voltage (VCES, e.g. 1200V) and the nominal current (ICnom = 100A, 200A…). On closer inspection, however, the user might be confused by the [...]