Category | Power Devices

Hall Effect Sensors

Posted on 17 September 2020

  Hall effect If we place a current carrying conductor or semiconductor in a perpendicular magnetic field B (fig. 1) then an electric field arises perpendicular to the I-B surface. This effect is known as the Hall-effect. This effect was discovered in 1879 by the American physicist Edwin Herbert Hall. Figure 1. Hall effect Consider [...]

Low loss, High Current SiC MOSFET Module

Posted on 11 September 2020

  ROHM Semiconductor introduced 1200V 120A full SiC (Silicon Carbide) power module composed of SiC Schottky barrier diodes (SBDs) and SiC MOSFETs. When compared with conventional IGBT modules, this module can reduce switching loss by 85%. However, this module is not necessarily enough to drive higher current, which is required from many industrial applications. This [...]

Opto-electronics

Posted on 04 September 2020

  LED (Light Emitting Diode) The light emitting diode (LED) has been used for years as a signal lamp, as number indicator and as a light emitting transmitter in an opto-coupler. In recent years the LED is becoming ever more popular as a light source. The operating principle of the LED rests on the release [...]

Silicon Carbide Boosts Power Module Performance

Posted on 22 August 2020

              Silicon Carbide offers new approaches for the design of power semiconductors. In conventional power Silicon technology, IGBTs are used as switches for voltages higher than 600 V, and Silicon PIN freewheeling diodes are state of the art. The design and soft switching behavior of Silicon power devices cause [...]

Evaluation Driver Board for EconoPACK™ 4 3-Level Modules

Posted on 13 August 2020

              The evaluation driver board F3L2020E12-F-P_EVAL for 3-level NPC2 EconoPACK™ 4 modules as shown in Figure 1 was developed to support customers during their first steps designing applications with EconoPACK™ 4 3-level NPC2 modules. This evaluation board was designed in addition to the module adapter board MA3L120E12_EVAL 1 or [...]

Thermal Modeling of Power Module Cooling Systems

Posted on 24 July 2020

              The extensive heat build-up in power modules caused by forward, switching, and blocking losses has to be dissipated by means of heatsinks. These heatsinks provide an expanded surface for convection and radiation, spreading the heat flow as well as reducing the intensity of transient thermal processes. Due to [...]

Safety Characteristics of Film Capacitors

Posted on 01 July 2020

                    Self-healing The most important reliability feature of film capacitors is their self-healing capability, i.e. their ability to clear faults (such as pores or impurities in the film) under the influence of a voltage. The metal coatings, vacuum-deposited directly onto the plastic film, are only 20 [...]

62mm Modules Application and Assembly Notes

Posted on 05 June 2020

              Important aspects in the construction of the mechanical layout include the application conditions at which the components are put to use. These application conditions must be observed in the mechanical as well as the electrical design, the thermal design and the lifetime of the power modules based on [...]

Overvoltage Limitation for Power Transistors

Posted on 03 June 2020

                    Overvoltage limitation between main terminals Measures to limit overvoltages between main terminals (collector-emitter voltage, DC link voltage) can be divided into passive snubber networks, active clamping, and dynamic gate control. Irrespective of the type of overvoltage limitation, the avalanche operation mode of a MOSFET can [...]

Power Module Basics

Posted on 21 May 2020

              Under normal circumstances, power electronics circuitry does not contain one single power semiconductor component but is composed of several components. When discrete devices are used, several of them, including their corresponding heat sinks, must be combined into one assembly to create a bundle of semiconductors that serve to [...]