Category | Power Modules

ROHM Expands Its Full SiC Power Module Lineup - New 1200V/300A model ideal for high power applications

Posted on 03 December 2015

  ROHM has recently announced the development of a 1200V/300A full SiC power module designed for inverters and converters in solar power conditioners and industrial equipment. The 300A rated current makes the BSM300D12P2E001 suitable for high power applications such as large-capacity power supplies for industrial equipment. In addition, 77% lower switching loss vs. conventional IGBT [...]

3% import tax for power electronics modules to China

Posted on 07 January 2014

  Based on a recent publication (in Chinese) released on the 16th of December 2013, it seems that the Chinese government has introduced to its tariff policies a 3% customs duty for importing power electronics modules into China. There is a general tariff of 10% applied, e.g. on drivers, and a temporary, or provisional, tariff [...]

Low loss, High Current SiC MOSFET Module

Posted on 11 September 2013

  ROHM Semiconductor introduced 1200V 120A full SiC (Silicon Carbide) power module composed of SiC Schottky barrier diodes (SBDs) and SiC MOSFETs. When compared with conventional IGBT modules, this module can reduce switching loss by 85%. However, this module is not necessarily enough to drive higher current, which is required from many industrial applications. This [...]

Silicon Carbide Boosts Power Module Performance

Posted on 22 August 2013

              Silicon Carbide offers new approaches for the design of power semiconductors. In conventional power Silicon technology, IGBTs are used as switches for voltages higher than 600 V, and Silicon PIN freewheeling diodes are state of the art. The design and soft switching behavior of Silicon power devices cause [...]

Evaluation Driver Board for EconoPACK™ 4 3-Level Modules

Posted on 13 August 2013

              The evaluation driver board F3L2020E12-F-P_EVAL for 3-level NPC2 EconoPACK™ 4 modules as shown in Figure 1 was developed to support customers during their first steps designing applications with EconoPACK™ 4 3-level NPC2 modules. This evaluation board was designed in addition to the module adapter board MA3L120E12_EVAL 1 or [...]

Thermal Modeling of Power Module Cooling Systems

Posted on 24 July 2013

              The extensive heat build-up in power modules caused by forward, switching, and blocking losses has to be dissipated by means of heatsinks. These heatsinks provide an expanded surface for convection and radiation, spreading the heat flow as well as reducing the intensity of transient thermal processes. Due to [...]

62mm Modules Application and Assembly Notes

Posted on 05 June 2013

              Important aspects in the construction of the mechanical layout include the application conditions at which the components are put to use. These application conditions must be observed in the mechanical as well as the electrical design, the thermal design and the lifetime of the power modules based on [...]

Power Module Basics

Posted on 21 May 2013

              Under normal circumstances, power electronics circuitry does not contain one single power semiconductor component but is composed of several components. When discrete devices are used, several of them, including their corresponding heat sinks, must be combined into one assembly to create a bundle of semiconductors that serve to [...]

IGBT and Diode Switching Loss Calculation

Posted on 08 March 2013

              In power electronics, both IGBT and diodes are operated as switches, taking on various static and dynamic states in cycles. In any of these states, one power dissipation or energy dissipation component is generated, heating the semiconductor and adding to the total power losses of the switch. Suitable [...]

Protection and monitoring functions for IGBT and MOSFET modules

Posted on 14 February 2013

              To protect MOSFET or IGBT modules in the event of malfunction/errors, the use of different efficient, quick-response protection functions in the driver is recommended; for example, overcurrent and short circuit protection, protection from excessive drain-source or collector-emitter voltage, gate overvoltage protection, overtemperature protection and monitoring of the gate [...]