Category | Thyristors

3% import tax for power electronics modules to China

Posted on 07 January 2014

  Based on a recent publication (in Chinese) released on the 16th of December 2013, it seems that the Chinese government has introduced to its tariff policies a 3% customs duty for importing power electronics modules into China. There is a general tariff of 10% applied, e.g. on drivers, and a temporary, or provisional, tariff [...]

Structure and Functional Principle of Thyristors

Posted on 27 March 2013

              A thyristor is a semiconductor component with a minimum of three pn-junctions which can be switched from off-state to on-state. Often, "thyristor" specifically designates the reverse-blocking triode thyristor which cannot be switched in reverse direction but blocks. In addition to the two terminals that a diode provides, a [...]

Series and Parallel Connection of Diodes and Thyristors

Posted on 25 March 2013

                    Parallel connection of thyristors In parallel thyristor circuit arrangements, homogenous current distribution is required from the moment of firing and throughout the entire current flow time. For this purpose, steeply rising trigger pulses of sufficient amplitude, as well as symmetrical line impedances in the main [...]

Mounting of Capsule Diodes and Thyristors (disc cells)

Posted on 22 February 2013

  Disc cell housings possess two thermal contact surfaces. For maximum current capacity yields, double-sided cooling (DSC) is usually used. For this purpose, the cell is clamped between two heat sinks using a clamping fixture as described below. In lower load applications, single-sided cooling (SSC) is used as a standard practice as well. The electrical [...]

Application Fields and Current Performance Limits for Power Semiconductors

Posted on 07 December 2012

  The development of power semiconductors saw the onset of lasting success for power electronics across all fields of electrical engineering. Given the ever increasing call for resource conservation (e.g. energy saving agenda), the use of renewable energies (e.g.wind power and photovoltaics) and the need for alternatives to fossil fuels (e.g. electric and hybrid drives [...]

High Voltage Power Thyristor with Built-in Protective Elements

Posted on 16 November 2012

  Despite the possibility of “outer” protection, usage of thyristors with built-in elements for protection against excess voltage may also be attractive to customers if such a thyristor has the same quality as a the standard one at a lower price. There are two types of protective elements that are different in principle of operation. [...]

High Voltage Thyristors Adjusted for Usage in Series Assemblies and Stacks

Posted on 09 November 2012

  Despite significant development of converters on the basis of fully controlled semiconductor stacks (IGBT, GTO, IGCT), today it is still technically legitimate and acceptable to use “traditional” high power thyristors in stacks of controlled rectifiers as well as in soft starters of electric motors. Usage of thyristors is especially relevant in the case of [...]

two transistor thyristor model

Dynamic Properties of Thyristors

Posted on 17 October 2012

                    Thyristor triggering mechanisms The flow of current through a thyristor can result in several ways. Triggering mechanisms for thyristors include the following: Trigger current through the gate Reverse current as a result of exceeding the maximum blocking voltage (breakdown voltage) ("overhead" ignition, tilt) Capacitive displacement [...]

IGCT

Thyristor Basics

Posted on 12 September 2012

  A thyristor is a four-layered semiconductor rectifier that consists of alternating p-type and n-type materials (see "Semiconductor Doping") forming three P-N Junctions. For thyristors, the flow of current between two electrodes, the anode and cathode, is triggered by a signal at a third electrode, the gate. Since the conducting state of thyristors is easily [...]

Power Devices Produced Using Proton Irradiation Technology

Posted on 01 June 2012

The application of proton irradiation technology has made possible the production of a new series of fast thyristors. These semiconductors have remarkably small turn-off time, small recovered charge and peak reverse recovery current. Implantation of hydrogen atoms during proton irradiation helps to build local hidden n’-layers with low specific resistance inside the n--layer of the [...]