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Posted on 23 May 2019

PCIM Europe 2014 Awards - Winners Announced

 

PCIM Europe logo

PCIM Europe 2014
International Exhibition and Conference for
Power Electronics, Intelligent Motion,
Renewable Energy and Energy Management
Nuremberg, 20 – 22 May 2019

 

The Best Paper and three Young Engineer Awards were presented during the opening ceremony of the PCIM Europe Conference 2014.

Four outstanding conference papers were selected from more than 260 high quality papers by the Conference Directors. The determining criteria were originality, topicality and quality. The Young Engineer Awards were granted to exceptional contributions from young professionals (not older than 35 years). The laudation was held by the Scientific Advisory Board Chairman, Prof. Leo Lorenz of ECPE, Germany.

The papers were given for the first time at the PCIM Europe 2014 Conference and are published in the proceedings. The three Young Engineer Award winners received prize money, whilst the Best Paper Award winner received prize money and an invitation to the PCIM Asia 2015 Conference in Shanghai.

The winner of the Best Paper Award is:

Martel Tsirinomeny, EPFL, Switzerland
Configurable Modular Multilevel Converter (CMMC) for a Universal and Flexible Integrated Charging System

The three PCIM Young Engineer Awards have been handed over to:

Hidekazu Umeda, Panasonic, Japan
Highly Efficient Low-Voltage DC-DC Converter at 2 – 5 MHz with High Operating Current Using GaN Gate Injection Transistors

Gang Yang, Valeo, France
High Efficiency Parallel-parallel Interleaved LLC Resonant Converter for HV/LV Conversion in Electric/Hybrid Vehicles

Vinoth Kumar Sundaramoorthy, ABB Switzerland
Simultaneous Online Estimation of Junction Temperature and Current of IGBTs Using Emitter-auxiliary Emitter Parasitic Inductance

PCIM Europe 2014 Best Paper Abstract:

Configurable Modular Multilevel Converter (CMMC) for a Universal and Flexible Integrated Charging System

Martel Tsirinomeny, Alfred Rufer, EPFL, Switzerland

Electric Vehicles owners are confronted by the limited compatibility of available charging infrastructures. Therefore, this paper is focused on presenting a Configurable Modular Multilevel Converter (CMMC) for a universal and flexible integrated charging system. This concept is designed for a large range of charging infrastructure; from AC household basic supply to AC or DC ultrafast charging.

PCIM Europe 2014 Young Engineer Award Abstracts:

Highly Efficient Low-Voltage DC-DC Converter at 2 – 5 MHz with High Operating Current Using GaN Gate Injection Transistors

Hidekazu Umeda, Yusuke Kinoshita, Shinji Ujita, Tatsuo Morita, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda, Panasonic, Japan

A low-voltage DC-DC converter using GaN Gate Injection Transistors (GITs) demonstrates highly efficient operation at 2-5MHz with high output current. Reduction of the gate lengths of the GITs and optimized design of the field plates significantly improve the RonQg down to 19mOnC. The peak efficiency at 2MHz reaches 90% for the conversion from 12V to 1.2V, while the operating current can be increased up to 50A. The converter also can serve 5MHz operation with the peak efficiency of 81%.

High Efficiency Parallel-parallel Interleaved LLC Resonant Converter for HV/LV Conversion in Electric/Hybrid Vehicles

Gang Yang, Pierre Sardat, Patrick Dubus, Valeo; Daniel Sadarnac, Supelec, France

A hybrid/electric automobile targeted 2.5kW, 250 kHz, HV/LV double phase parallel-parallel LLC resonant converter is presented. A double loop control strategy is proposed to share the current equally between the two power cells and to maintain a high efficiency among a wide power range. The total prototype performs 3kg, 2.5L, with a nominal efficiency higher than 94% and a power density 1W/cm3.

Simultaneous Online Estimation of Junction Temperature and Current of IGBTs Using Emitter-auxiliary Emitter Parasitic Inductance

Vinoth Kumar Sundaramoorthy, Enea Bianda, Richard Bloch, Franz Zurfluh, ABB Switzerland

A novel method is presented for online estimation of the junction temperature (Tj) of semiconductor chips in IGBT modules, based on the voltage drop (VEE`) across the parasitic inductor that exists between the main emitter (E) and auxiliary emitter (E`) terminals. The peak amplitude of the voltage drop (VEE`) was found to depend on the junction temperature at a known current and DC link voltage. Also, the collector current can be estimated simultaneously, by integrating VEE without the use of any additional sensors. Measurement circuits were implemented to estimate Tj and the current, and their results are discussed.

 

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