Category | Drivers

3% import tax for power electronics modules to China

Posted on 07 January 2020

  Based on a recent publication (in Chinese) released on the 16th of December 2013, it seems that the Chinese government has introduced to its tariff policies a 3% customs duty for importing power electronics modules into China. There is a general tariff of 10% applied, e.g. on drivers, and a temporary, or provisional, tariff [...]

Evaluation Driver Board for EconoPACK™ 4 3-Level Modules

Posted on 13 August 2020

              The evaluation driver board F3L2020E12-F-P_EVAL for 3-level NPC2 EconoPACK™ 4 modules as shown in Figure 1 was developed to support customers during their first steps designing applications with EconoPACK™ 4 3-level NPC2 modules. This evaluation board was designed in addition to the module adapter board MA3L120E12_EVAL 1 or [...]

Driver Units for Thyristors

Posted on 15 April 2020

              The link between the electronic control components of a converter and the thyristors is the driver (driver circuit). The purpose of the driver is to generate suitable current pulses in order to drive the thyristors; the frequency, phase length, sequence, etc., of these pulses are affected by the [...]

Driver Parameters and Switching Properties of IGBTs and MOSFETs

Posted on 18 February 2020

              The important features of driven power MOSFET or IGBT are dependent on VGG+, VGG-, and RG ratings. The table below lists many of these features and provides an initial overview of how they relate to VGG+, VGG-, and RG. The symbols in the table are to be interpreted [...]

Driver Circuit Structures

Posted on 08 February 2020

              Figure 1 below shows the basic structure of a high performance driver circuit for a MOSFET or IGBT bridge arm which, in addition to the basic gate driver function, includes TOP/BOTTOM interlock, protection and monitoring functions, as well as pulse shapers. The driver depicted features TOP and BOTTOM [...]

Gate Current and Gate Voltage Characteristics for Drivers

Posted on 18 January 2020

              The switching behavior of MOSFET and IGBT modules can be largely controlled by the gate capacitance recharge speed (i.e., in this case: gate capacitance = input capacitance CGE + CCG). In theoretical borderline cases, the gate capacitance recharge may be controlled by resistance, voltage, or current (Figure 1). [...]

Driver Circuits

Posted on 11 December 2020

  Driver circuits are most commonly used to amplify signals from controllers or microcontrollers in order to control power switches in semiconductor devices. Driver circuits often take on additional functions which include isolating the control circuit and the power circuit, detecting malfunctions, storing and reporting failures to the control system, serving as a precaution against [...]

Connection of Gate Drivers to IGBT and Controller

Posted on 24 July 2020

    This article explores the connection of the gate driver with the controller and IGBT modules. This information should support in minimizing malfunctions of gate driver and IGBT modules due to electromagnetic interference, signal oscillation, or induced noise. The information given in this application note is not exhaustive.     Connection between gate driver [...]

Pulse Transformer Requirements

Posted on 12 June 2020

              In addition to pulse duration and amplitude, a driver pulse transformer has to meet other requirements as well. In bridge circuits, in particular, the cathode potentials of the individual thyristors are not only different but also change rapidly in step with the operating frequency. Owing to the winding [...]

Driver Signal Pulse Length

Posted on 23 April 2020

              For the majority of thyristors, the minimum pulse length is 10 μs. Rectifiers with negative voltage and AC power controllers with inductive load, however, cannot trigger reliably until the voltage across the thyristors is positive. Long driver pulses are needed to ensure that this happens. For the driver [...]