Category | IGBT

3% import tax for power electronics modules to China

Posted on 07 January 2020

  Based on a recent publication (in Chinese) released on the 16th of December 2013, it seems that the Chinese government has introduced to its tariff policies a 3% customs duty for importing power electronics modules into China. There is a general tariff of 10% applied, e.g. on drivers, and a temporary, or provisional, tariff [...]

Make or buy: the IGBT assembly conundrum

Posted on 30 September 2020

              'Focus on our strengths' is a motto of our times. It’s likely to be heard in the financial results of a giant multinational, or seen in the business plan of the newest startup. It leads in different directions depending on just what those strengths are. In power electronics, [...]

62mm Modules Application and Assembly Notes

Posted on 05 June 2020

              Important aspects in the construction of the mechanical layout include the application conditions at which the components are put to use. These application conditions must be observed in the mechanical as well as the electrical design, the thermal design and the lifetime of the power modules based on [...]

Overvoltage Limitation for Power Transistors

Posted on 03 June 2020

                    Overvoltage limitation between main terminals Measures to limit overvoltages between main terminals (collector-emitter voltage, DC link voltage) can be divided into passive snubber networks, active clamping, and dynamic gate control. Irrespective of the type of overvoltage limitation, the avalanche operation mode of a MOSFET can [...]

Fast IGBT based on TRENCHSTOP™5 technology for industrial applications

Posted on 29 April 2020

              Historically, fast IGBTs have been proposed as the replacement of conventional or Superjunction MOSFETs due to higher power density. However, because of technology limitations, there are only limited areas where IGBTs can reach both commercial and technical advantages. The new TRENCHSTOPTM5 IGBT overcomes many of those technical limitations, [...]

Semiconductor Models

Posted on 11 March 2020

                This article looks at semiconductor models used in electric circuit simulation. Before starting to look for suitable models, the following question must always be answered: What properties does my model have to have to meet the simulation task at hand? Analysis of the circuit operating principle: Ideal [...]

IGBT and Diode Switching Loss Calculation

Posted on 08 March 2020

              In power electronics, both IGBT and diodes are operated as switches, taking on various static and dynamic states in cycles. In any of these states, one power dissipation or energy dissipation component is generated, heating the semiconductor and adding to the total power losses of the switch. Suitable [...]

Driver Parameters and Switching Properties of IGBTs and MOSFETs

Posted on 18 February 2020

              The important features of driven power MOSFET or IGBT are dependent on VGG+, VGG-, and RG ratings. The table below lists many of these features and provides an initial overview of how they relate to VGG+, VGG-, and RG. The symbols in the table are to be interpreted [...]

Protection and monitoring functions for IGBT and MOSFET modules

Posted on 14 February 2020

              To protect MOSFET or IGBT modules in the event of malfunction/errors, the use of different efficient, quick-response protection functions in the driver is recommended; for example, overcurrent and short circuit protection, protection from excessive drain-source or collector-emitter voltage, gate overvoltage protection, overtemperature protection and monitoring of the gate [...]

Types of Faults for IGBT and MOSFET Modules

Posted on 06 February 2020

              Power semiconductors have to be protected from non-permissible stress in every operational state. Leaving SOAs (Safe Operating Areas) leads to damage and therefore reduces component's life. In the worst case scenario, the component will be immediately destroyed. This is why it is important to detect critical states and [...]